Справочник MOSFET. DMG4N60SJ3

 

DMG4N60SJ3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMG4N60SJ3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 47 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO251

 Аналог (замена) для DMG4N60SJ3

 

 

DMG4N60SJ3 Datasheet (PDF)

 ..1. Size:396K  diodes
 dmg4n60sj3.pdf

DMG4N60SJ3 DMG4N60SJ3

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS (@ TJ Max) RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 650V 3.0A Low Input Capacitance 2.5 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

 ..2. Size:273K  inchange semiconductor
 dmg4n60sj3.pdf

DMG4N60SJ3 DMG4N60SJ3

isc N-Channel MOSFET Transistor DMG4N60SJ3FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:388K  diodes
 dmg4n60sct.pdf

DMG4N60SJ3 DMG4N60SJ3

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SCT DMG4N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application TC = +25C Low Input/Output Leakage 650V 2.5@VGS = 10V 4.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 6.2. Size:375K  diodes
 dmg4n60sk3.pdf

DMG4N60SJ3 DMG4N60SJ3

NOT RECOMMENDED FOR NEW DESIGN USE DMN60H3D5SK3 / DMN60H4D5SK3 DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS (@ TJ Max) RDS(ON) Max TC = +25C Low Gate Input Resistance 650V 3.7A Low Input Capacitance 2.3 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Note

 6.3. Size:260K  inchange semiconductor
 dmg4n60sct.pdf

DMG4N60SJ3 DMG4N60SJ3

isc N-Channel MOSFET Transistor DMG4N60SCTFEATURESDrain Current I = 4.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 6.4. Size:266K  inchange semiconductor
 dmg4n60sk3.pdf

DMG4N60SJ3 DMG4N60SJ3

isc N-Channel MOSFET Transistor DMG4N60SK3FEATURESDrain Current I = 3.7A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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