DMG7N65SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMG7N65SCT
Código: 7N65SCT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 25.2 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 63 pF
Resistencia entre drenaje y fuente RDS(on): 1.4 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET DMG7N65SCT
DMG7N65SCT Datasheet (PDF)
dmg7n65sct.pdf
DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID BV R DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 650V 1.4@V = 10V 7.7A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automo
dmg7n65sct.pdf
isc N-Channel MOSFET Transistor DMG7N65SCTFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
dmg7n65scti.pdf
DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package TC = +25 High BVDSS Rating for Power Application C ITO220AB Low Input/Output Leakage 650V 1.4@VGS = 10V 7.7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip
dmg7n65scti.pdf
isc N-Channel MOSFET Transistor DMG7N65SCTIFEATURESDrain Current I = 7.7A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmg7n65sj3.pdf
DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I DBV R DSS DS(ON) Max High BV Rating for Power Application DSST = +25C C Low Input Capacitance 650V 1.4 @ V = 10V 5.5A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automot
dmg7n65sj3.pdf
isc N-Channel MOSFET Transistor DMG7N65SJ3FEATURESDrain Current I = 5.5A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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