DMG7N65SCT - аналоги, параметры транзистора - Справочник транзисторов

DMG7N65SCT даташит

..1. Size:453K diodes
dmg7n65sct.pdf pdf_icon

DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D BV R DSS DS(ON) High BV Rating for Power Application DSS T = +25 C C Low Input/Output Leakage 650V 1.4 @V = 10V 7.7A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automo

..2. Size:260K inchange semiconductor
dmg7n65sct.pdf pdf_icon

isc N-Channel MOSFET Transistor DMG7N65SCT FEATURES Drain Current I = 7.7A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

0.1. Size:345K diodes
dmg7n65scti.pdf pdf_icon

DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package TC = +25 High BVDSS Rating for Power Application C ITO220AB Low Input/Output Leakage 650V 1.4 @VGS = 10V 7.7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip

0.2. Size:251K inchange semiconductor
dmg7n65scti.pdf pdf_icon

isc N-Channel MOSFET Transistor DMG7N65SCTI FEATURES Drain Current I = 7.7A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p