DMJ70H1D3SH3 Todos los transistores

 

DMJ70H1D3SH3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMJ70H1D3SH3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.6 nS
   Cossⓘ - Capacitancia de salida: 66 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO251
 

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DMJ70H1D3SH3 Datasheet (PDF)

 ..1. Size:506K  diodes
 dmj70h1d3sh3.pdf pdf_icon

DMJ70H1D3SH3

PART OBSOLETE - NO ALTERNATE PART DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.3 @ VGS = 10V 4.6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 ..2. Size:273K  inchange semiconductor
 dmj70h1d3sh3.pdf pdf_icon

DMJ70H1D3SH3

isc N-Channel MOSFET Transistor DMJ70H1D3SH3FEATURESDrain Current I = 4.6A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.1. Size:494K  diodes
 dmj70h1d0sv3.pdf pdf_icon

DMJ70H1D3SH3

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D0SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.0 @ VGS = 10V 6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 6.2. Size:493K  diodes
 dmj70h1d5sv3.pdf pdf_icon

DMJ70H1D3SH3

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D5SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre

MOSTRAR MÁS

Otros transistores... DMG4N60SCT , DMG4N60SJ3 , DMG4N60SK3 , DMG7N65SCT , DMG7N65SCTI , DMG7N65SJ3 , DMG8N65SCT , DMJ70H1D0SV3 , IRF520 , DMJ70H1D4SV3 , DMJ70H1D5SV3 , DMJ70H600SH3 , DMJ70H601SK3 , DMJ70H601SV3 , DMJ70H900HJ3 , DMN15H310SK3 , DMN6017SK3 .

History: 2SK246 | AP9468GS

 

 
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