DMJ70H1D3SH3 - описание и поиск аналогов

PART OBSOLETE - NO ALTERNATE PART DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.3 @ VGS = 10V 4.6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

isc N-Channel MOSFET Transistor DMJ70H1D3SH3 FEATURES Drain Current I = 4.6A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D0SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.0 @ VGS = 10V 6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D5SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre

isc N-Channel MOSFET Transistor DMJ70H1D0SV3 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor DMJ70H1D5SV3 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor DMJ70H1D4SV3 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general