DMJ70H1D3SH3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMJ70H1D3SH3
Маркировка: 7N70SH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 41 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 4.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.9 nC
Время нарастания (tr): 11.6 ns
Выходная емкость (Cd): 66 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.3 Ohm
Тип корпуса: TO251
Аналог (замена) для DMJ70H1D3SH3
DMJ70H1D3SH3 Datasheet (PDF)
dmj70h1d3sh3.pdf
PART OBSOLETE - NO ALTERNATE PART DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.3 @ VGS = 10V 4.6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi
dmj70h1d3sh3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D3SH3FEATURESDrain Current I = 4.6A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmj70h1d0sv3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D0SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.0 @ VGS = 10V 6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
dmj70h1d5sv3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D5SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre
dmj70h1d4sv3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D4SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
dmj70h1d0sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D0SV3FEATURESDrain Current I = 6.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmj70h1d5sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D5SV3FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmj70h1d4sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D4SV3FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
