DMJ70H900HJ3 Todos los transistores

 ..1. Size:627K  diodes
 dmj70h900hj3.pdf

NOT RECOMMENDED FOR NEW DESIGN - DMJ70H900HJ3 NO ALTERNATE PART Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TC = +25 C High BVDSS Rating for Power Application 700V 0.9 @ VGS = 10V 7A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimon

 ..2. Size:275K  inchange semiconductor
 dmj70h900hj3.pdf

isc N-Channel MOSFET Transistor DMJ70H900HJ3 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.1. Size:494K  diodes
 dmj70h1d0sv3.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D0SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.0 @ VGS = 10V 6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 8.2. Size:453K  diodes
 dmj70h600sh3.pdf

DMJ70H600SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25 C Low Input Capacitance 700V 0.6 @ VGS = 10V 11A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applicati

 8.3. Size:452K  diodes
 dmj70h601sk3.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A

 8.4. Size:559K  diodes
 dmj70h601sv3.pdf

 8.5. Size:493K  diodes
 dmj70h1d5sv3.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D5SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre

 8.6. Size:515K  diodes
 dmj70h1d4sv3.pdf

 8.7. Size:506K  diodes
 dmj70h1d3sh3.pdf

PART OBSOLETE - NO ALTERNATE PART DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.3 @ VGS = 10V 4.6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 8.8. Size:274K  inchange semiconductor
 dmj70h1d0sv3.pdf

isc N-Channel MOSFET Transistor DMJ70H1D0SV3 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.9. Size:274K  inchange semiconductor
 dmj70h600sh3.pdf

isc N-Channel MOSFET Transistor DMJ70H600SH3 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 8.10. Size:266K  inchange semiconductor
 dmj70h601sk3.pdf

isc N-Channel MOSFET Transistor DMJ70H601SK3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.11. Size:274K  inchange semiconductor
 dmj70h601sv3.pdf

isc N-Channel MOSFET Transistor DMJ70H601SV3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.12. Size:274K  inchange semiconductor
 dmj70h1d5sv3.pdf

isc N-Channel MOSFET Transistor DMJ70H1D5SV3 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.13. Size:274K  inchange semiconductor
 dmj70h1d4sv3.pdf

isc N-Channel MOSFET Transistor DMJ70H1D4SV3 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 8.14. Size:273K  inchange semiconductor
 dmj70h1d3sh3.pdf

isc N-Channel MOSFET Transistor DMJ70H1D3SH3 FEATURES Drain Current I = 4.6A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general