DMJ70H900HJ3
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMJ70H900HJ3
Marking Code: 70H900
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18.4
nC
trⓘ - Rise Time: 18.7
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package:
TO251
DMJ70H900HJ3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMJ70H900HJ3
Datasheet (PDF)
..1. Size:627K diodes
dmj70h900hj3.pdf 
NOT RECOMMENDED FOR NEW DESIGN - DMJ70H900HJ3 NO ALTERNATE PART GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 700V 0.9 @ VGS = 10V 7A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimon
..2. Size:275K inchange semiconductor
dmj70h900hj3.pdf
isc N-Channel MOSFET Transistor DMJ70H900HJ3FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
8.1. Size:494K diodes
dmj70h1d0sv3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D0SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.0 @ VGS = 10V 6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
8.2. Size:453K diodes
dmj70h600sh3.pdf
DMJ70H600SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25C Low Input Capacitance 700V 0.6 @ VGS = 10V 11A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applicati
8.3. Size:452K diodes
dmj70h601sk3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A
8.4. Size:559K diodes
dmj70h601sv3.pdf
NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATIVE PART DMJ70H601SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25C Low Input Capacitance 700V 0.6 @ VGS = 10V 8A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
8.5. Size:493K diodes
dmj70h1d5sv3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D5SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre
8.6. Size:515K diodes
dmj70h1d4sv3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D4SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
8.7. Size:506K diodes
dmj70h1d3sh3.pdf
PART OBSOLETE - NO ALTERNATE PART DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25C High BVDSS Rating for Power Application 700V 1.3 @ VGS = 10V 4.6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi
8.8. Size:274K inchange semiconductor
dmj70h1d0sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D0SV3FEATURESDrain Current I = 6.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
8.9. Size:274K inchange semiconductor
dmj70h600sh3.pdf
isc N-Channel MOSFET Transistor DMJ70H600SH3FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
8.10. Size:266K inchange semiconductor
dmj70h601sk3.pdf
isc N-Channel MOSFET Transistor DMJ70H601SK3FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
8.11. Size:274K inchange semiconductor
dmj70h601sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H601SV3FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
8.12. Size:274K inchange semiconductor
dmj70h1d5sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D5SV3FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
8.13. Size:274K inchange semiconductor
dmj70h1d4sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D4SV3FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
8.14. Size:273K inchange semiconductor
dmj70h1d3sh3.pdf
isc N-Channel MOSFET Transistor DMJ70H1D3SH3FEATURESDrain Current I = 4.6A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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