DMJ70H900HJ3 PDF and Equivalents Search

NOT RECOMMENDED FOR NEW DESIGN - DMJ70H900HJ3 NO ALTERNATE PART Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TC = +25 C High BVDSS Rating for Power Application 700V 0.9 @ VGS = 10V 7A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimon... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H900HJ3 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D0SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.0 @ VGS = 10V 6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.... See More ⇒

DMJ70H600SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25 C Low Input Capacitance 700V 0.6 @ VGS = 10V 11A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applicati... See More ⇒

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A... See More ⇒

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NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H1D5SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.5 @ VGS = 10V 5.0A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fre... See More ⇒

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PART OBSOLETE - NO ALTERNATE PART DMJ70H1D3SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX Low On-Resistance BVDSS RDS(ON) MAX TC = +25 C High BVDSS Rating for Power Application 700V 1.3 @ VGS = 10V 4.6A Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H1D0SV3 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H600SH3 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H601SK3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H601SV3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H1D5SV3 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H1D4SV3 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

isc N-Channel MOSFET Transistor DMJ70H1D3SH3 FEATURES Drain Current I = 4.6A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒