DMN60H4D5SK3 Todos los transistores

 

DMN60H4D5SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN60H4D5SK3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10.5 nS
   Cossⓘ - Capacitancia de salida: 30.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET DMN60H4D5SK3

 

DMN60H4D5SK3 Datasheet (PDF)

 ..1. Size:330K  diodes
dmn60h4d5sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN60H4D5SK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) TC = +25 High BVDSS Rating for Power Application C 600V 4.5@VGS = 10V 2.5A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSF

 ..2. Size:266K  inchange semiconductor
dmn60h4d5sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

isc N-Channel MOSFET Transistor DMN60H4D5SK3FEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 8.1. Size:542K  diodes
dmn60h3d5sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

Green DMN60H3D5SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 600V 3.5 @ VGS = 10V 2.8A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new

 8.2. Size:266K  inchange semiconductor
dmn60h3d5sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

isc N-Channel MOSFET Transistor DMN60H3D5SK3FEATURESDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 9.1. Size:667K  diodes
dmn6068lk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

A Product Line ofDiodes IncorporatedDMN6068LK360V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 68m @ VGS= 10V 8.5A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan

 9.2. Size:243K  diodes
dmn6040ssd.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40m @ VGS = 10V 5.0A Halogen and Antimony Free. Green Device (Note 3) 60V 4.4A Qualified to AEC

 9.3. Size:148K  diodes
dmn601wk.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN601WKN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per

 9.4. Size:517K  diodes
dmn6075s.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6075S 60V N-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits ID max N MOSFET V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Low Input Capacitance 85 m @ VGS = 10V 2.5A 60V Fast Switching Speed 120 m @ VGS = 4.5V 2.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

 9.5. Size:493K  diodes
dmn6017sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 18m @ VGS = 10V 43A 60V Halogen and Antimony Free. Green Device (Note 3) 20m @ VGS = 4.5V 41A Qualified to AEC-Q101 Standards for H

 9.6. Size:230K  diodes
dmn6070ssd.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6070SSD60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 80m @ VGS = 10V 4.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3

 9.7. Size:322K  diodes
dmn6013lfg.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6013LFG60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 13m @ VGS = 10V 10.3A density end products 60V 18m @ VGS = 4.5V 8.8A Occupies just 33% of the board area o

 9.8. Size:469K  diodes
dmn6040ssdq.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(ON) Max Low On-Resistance TA = +25C Fast Switching Speed 40m @ VGS = 10V 5.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V Halogen and Antimony Free. Green Device (Note 3) 4.4A 55m @ VGS = 4.5V

 9.9. Size:278K  diodes
dmn6070sfcl.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6070SFCL60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25C applications Low RDS(ON) minimizes conduction losses 85 m @ VGS = 10V 3.0A 60V PCB footprint of 2.56mm2 120 m @ VGS = 4V 2.5A Totally Lead-Free & Fully RoHS C

 9.10. Size:706K  diodes
dmn6066ssd.pdf

DMN60H4D5SK3
DMN60H4D5SK3

A Product Line ofDiodes IncorporatedDMN6066SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 3.6A Me

 9.11. Size:624K  diodes
dmn6068se.pdf

DMN60H4D5SK3
DMN60H4D5SK3

A Product Line ofDiodes IncorporatedDMN6068SE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistanceTA = 25C Fast switching speed 68m @ VGS= 10V 5.6A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan

 9.12. Size:504K  diodes
dmn6040svtq.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SVTQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Low On-Resistance 44m @ VGS = 10V 5.0A Fast Switching Speed 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.3A 60m @ VGS = 4.5V

 9.13. Size:198K  diodes
dmn601dmk.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN601DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity:

 9.14. Size:238K  diodes
dmn6040sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SK360V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TC = +25C Low On-Resistance40m @ VGS = 10V 20A Fast Switching Speed 60V 50m @ VGS = 4.5V 16A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q1

 9.15. Size:495K  diodes
dmn6070sy.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Gate Threshold Voltage BVDSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed 85m @ VGS = 10V 4.1A 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3) Description Me

 9.16. Size:195K  diodes
dmn6040sfde.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SFDE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Package 0.6mm profile ideal for low profile applications TA = +25C PCB footprint of 4mm2 38m @ VGS = 10V 6.5A U-DFN2020-6 Low On-Resistance 60V Type E 47m @ VGS = 4.5V 5.

 9.17. Size:172K  diodes
dmn6040sss.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SSSN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 40m @ VGS = 10V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 60V Qualified to AEC-Q101 standard

 9.18. Size:317K  diodes
dmn6069se.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6069SE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID Fast switching speed V(BR)DSS RDS(ON) max TA = +25C Low on-resistance 69m @ VGS = 10V 4.3A Lead-Free Finish; RoHS compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.5A Halogen and Antimony Free. Green Device (

 9.19. Size:286K  diodes
dmn601vk.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN601VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Termi

 9.20. Size:136K  diodes
dmn601tk.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN601TKN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-523 Case Material: Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensiti

 9.21. Size:678K  diodes
dmn6066sss.pdf

DMN60H4D5SK3
DMN60H4D5SK3

A Product Line ofDiodes IncorporatedDMN6066SSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 5.0A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 4.1A Mechani

 9.22. Size:196K  diodes
dmn601dwk.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN601DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity:

 9.23. Size:185K  diodes
dmn601k.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN601KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Case Material: Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivi

 9.24. Size:199K  diodes
dmn6040svt.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SVT60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Low On-Resistance Fast Switching Speed 44m @ VGS = 10V 5.0A 60V Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 60m @ VGS = 4.5V 4.3A

 9.25. Size:885K  cn vbsemi
dmn6068se-13.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6068SE-13www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSF

 9.26. Size:1549K  cn vbsemi
dmn6070ssd.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6070SSDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

 9.27. Size:808K  cn vbsemi
dmn6040sk3-13.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6040SK3-13www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi

 9.28. Size:892K  cn vbsemi
dmn6068lk3-13.pdf

DMN60H4D5SK3
DMN60H4D5SK3

DMN6068LK3-13www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

 9.29. Size:266K  inchange semiconductor
dmn6068lk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

isc N-Channel MOSFET Transistor DMN6068LK3FEATURESDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 68m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 9.30. Size:266K  inchange semiconductor
dmn6017sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

isc N-Channel MOSFET Transistor DMN6017SK3FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.31. Size:265K  inchange semiconductor
dmn6040sk3.pdf

DMN60H4D5SK3
DMN60H4D5SK3

isc N-Channel MOSFET Transistor DMN6040SK3FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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