DMN60H4D5SK3 PDF and Equivalents Search

 ..1. Size:330K  diodes
 dmn60h4d5sk3.pdf

DMN60H4D5SK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) TC = +25 High BVDSS Rating for Power Application C 600V 4.5 @VGS = 10V 2.5A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSF... See More ⇒

 ..2. Size:266K  inchange semiconductor
 dmn60h4d5sk3.pdf

isc N-Channel MOSFET Transistor DMN60H4D5SK3 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 8.1. Size:542K  diodes
 dmn60h3d5sk3.pdf

Green DMN60H3D5SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Max TC = +25 C High BVDSS Rating for Power Application 600V 3.5 @ VGS = 10V 2.8A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new ... See More ⇒

 8.2. Size:266K  inchange semiconductor
 dmn60h3d5sk3.pdf

isc N-Channel MOSFET Transistor DMN60H3D5SK3 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 3.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 9.1. Size:667K  diodes
 dmn6068lk3.pdf

A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = 25 C Fast switching speed 68m @ VGS= 10V 8.5A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan... See More ⇒

 9.2. Size:243K  diodes
 dmn6040ssd.pdf

DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40m @ VGS = 10V 5.0A Halogen and Antimony Free. Green Device (Note 3) 60V 4.4A Qualified to AEC... See More ⇒

 9.3. Size:148K  diodes
 dmn601wk.pdf

DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-323 Case Material Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per ... See More ⇒

 9.4. Size:517K  diodes
 dmn6075s.pdf

DMN6075S 60V N-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits ID max N MOSFET V(BR)DSS RDS(ON) max TA = +25 C Low On-Resistance Low Input Capacitance 85 m @ VGS = 10V 2.5A 60V Fast Switching Speed 120 m @ VGS = 4.5V 2.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note... See More ⇒

 9.5. Size:493K  diodes
 dmn6017sk3.pdf

DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 18m @ VGS = 10V 43A 60V Halogen and Antimony Free. Green Device (Note 3) 20m @ VGS = 4.5V 41A Qualified to AEC-Q101 Standards for H... See More ⇒

 9.6. Size:230K  diodes
 dmn6070ssd.pdf

DMN6070SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 80m @ VGS = 10V 4.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3... See More ⇒

 9.7. Size:322K  diodes
 dmn6013lfg.pdf

DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C 13m @ VGS = 10V 10.3A density end products 60V 18m @ VGS = 4.5V 8.8A Occupies just 33% of the board area o... See More ⇒

 9.8. Size:469K  diodes
 dmn6040ssdq.pdf

DMN6040SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(ON) Max Low On-Resistance TA = +25 C Fast Switching Speed 40m @ VGS = 10V 5.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V Halogen and Antimony Free. Green Device (Note 3) 4.4A 55m @ VGS = 4.5V ... See More ⇒

 9.9. Size:278K  diodes
 dmn6070sfcl.pdf

DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25 C applications Low RDS(ON) minimizes conduction losses 85 m @ VGS = 10V 3.0A 60V PCB footprint of 2.56mm2 120 m @ VGS = 4V 2.5A Totally Lead-Free & Fully RoHS C... See More ⇒

 9.10. Size:706K  diodes
 dmn6066ssd.pdf

A Product Line of Diodes Incorporated DMN6066SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 3.6A Me... See More ⇒

 9.11. Size:624K  diodes
 dmn6068se.pdf

A Product Line of Diodes Incorporated DMN6068SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = 25 C Fast switching speed 68m @ VGS= 10V 5.6A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan... See More ⇒

 9.12. Size:504K  diodes
 dmn6040svtq.pdf

DMN6040SVTQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25 C Low On-Resistance 44m @ VGS = 10V 5.0A Fast Switching Speed 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.3A 60m @ VGS = 4.5V... See More ⇒

 9.13. Size:198K  diodes
 dmn601dmk.pdf

DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity ... See More ⇒

 9.14. Size:238K  diodes
 dmn6040sk3.pdf

DMN6040SK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TC = +25 C Low On-Resistance 40m @ VGS = 10V 20A Fast Switching Speed 60V 50m @ VGS = 4.5V 16A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q1... See More ⇒

 9.15. Size:495K  diodes
 dmn6070sy.pdf

DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Gate Threshold Voltage BVDSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed 85m @ VGS = 10V 4.1A 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3) Description Me... See More ⇒

 9.16. Size:195K  diodes
 dmn6040sfde.pdf

DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Package 0.6mm profile ideal for low profile applications TA = +25 C PCB footprint of 4mm2 38m @ VGS = 10V 6.5A U-DFN2020-6 Low On-Resistance 60V Type E 47m @ VGS = 4.5V 5.... See More ⇒

 9.17. Size:172K  diodes
 dmn6040sss.pdf

DMN6040SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 40m @ VGS = 10V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 60V Qualified to AEC-Q101 standard... See More ⇒

 9.18. Size:317K  diodes
 dmn6069se.pdf

DMN6069SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID Fast switching speed V(BR)DSS RDS(ON) max TA = +25 C Low on-resistance 69m @ VGS = 10V 4.3A Lead-Free Finish; RoHS compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.5A Halogen and Antimony Free. Green Device (... See More ⇒

 9.19. Size:286K  diodes
 dmn601vk.pdf

DMN601VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Termi... See More ⇒

 9.20. Size:136K  diodes
 dmn601tk.pdf

DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-523 Case Material Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensiti... See More ⇒

 9.21. Size:678K  diodes
 dmn6066sss.pdf

A Product Line of Diodes Incorporated DMN6066SSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 5.0A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 4.1A Mechani... See More ⇒

 9.22. Size:196K  diodes
 dmn601dwk.pdf

DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity ... See More ⇒

 9.23. Size:185K  diodes
 dmn601k.pdf

DMN601K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-23 Case Material Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivi... See More ⇒

 9.24. Size:199K  diodes
 dmn6040svt.pdf

... See More ⇒

 9.25. Size:885K  cn vbsemi
 dmn6068se-13.pdf

DMN6068SE-13 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSF... See More ⇒

 9.26. Size:1549K  cn vbsemi
 dmn6070ssd.pdf

DMN6070SSD www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann... See More ⇒

 9.27. Size:808K  cn vbsemi
 dmn6040sk3-13.pdf

DMN6040SK3-13 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi... See More ⇒

 9.28. Size:892K  cn vbsemi
 dmn6068lk3-13.pdf

DMN6068LK3-13 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters ... See More ⇒

 9.29. Size:266K  inchange semiconductor
 dmn6068lk3.pdf

isc N-Channel MOSFET Transistor DMN6068LK3 FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 68m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 9.30. Size:266K  inchange semiconductor
 dmn6017sk3.pdf

isc N-Channel MOSFET Transistor DMN6017SK3 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 9.31. Size:265K  inchange semiconductor
 dmn6040sk3.pdf

isc N-Channel MOSFET Transistor DMN6040SK3 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒