DMN90H8D5HCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN90H8D5HCT
   Código: 90H8D5H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 125 W
   Voltaje máximo drenador - fuente |Vds|: 900 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 2.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 7.9 nC
   Tiempo de subida (tr): 21 nS
   Conductancia de drenaje-sustrato (Cd): 45 pF
   Resistencia entre drenaje y fuente RDS(on): 7 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET DMN90H8D5HCT

DMN90H8D5HCT Datasheet (PDF)

..1. Size:602K diodes
dmn90h8d5hct.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BV R Package DSS DS(ON)T = +25C C High BV Rating for Power Application DSSTO220AB Low Input/Output Leakage 900V 7@V = 10V 2.5A GS(Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H

..2. Size:261K inchange semiconductor
dmn90h8d5hct.pdf

isc N-Channel MOSFET Transistor DMN90H8D5HCTFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

0.1. Size:545K diodes
dmn90h8d5hcti.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance IDBV R DSS DS(ON) High BVDSS Rating for Power Application T = +25C C Low Input/Output Leakage 900V 7@VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green

0.2. Size:252K inchange semiconductor
dmn90h8d5hcti.pdf

isc N-Channel MOSFET Transistor DMN90H8D5HCTIFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

8.1. Size:369K diodes
dmn90h2d2hcti.pdf

DMN90H2D2HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application (Note 7) TC = +25C Low Input/Output Leakage 1000V 2.2@VGS = 10V 6A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

8.2. Size:251K inchange semiconductor
dmn90h2d2hcti.pdf

isc N-Channel MOSFET Transistor DMN90H2D2HCTIFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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