DMN90H8D5HCT Todos los transistores

 

DMN90H8D5HCT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN90H8D5HCT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm

Encapsulados: TO220AB

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DMN90H8D5HCT datasheet

 ..1. Size:602K  diodes
dmn90h8d5hct.pdf pdf_icon

DMN90H8D5HCT

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low Input Capacitance BV R Package DSS DS(ON) T = +25 C C High BV Rating for Power Application DSS TO220AB Low Input/Output Leakage 900V 7 @V = 10V 2.5A GS (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H

 ..2. Size:261K  inchange semiconductor
dmn90h8d5hct.pdf pdf_icon

DMN90H8D5HCT

isc N-Channel MOSFET Transistor DMN90H8D5HCT FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 0.1. Size:545K  diodes
dmn90h8d5hcti.pdf pdf_icon

DMN90H8D5HCT

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BVDSS Rating for Power Application T = +25 C C Low Input/Output Leakage 900V 7 @VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green

 0.2. Size:252K  inchange semiconductor
dmn90h8d5hcti.pdf pdf_icon

DMN90H8D5HCT

isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

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History: BSC084P03NS3G

 

 

 


History: BSC084P03NS3G

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