DMN90H8D5HCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN90H8D5HCT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET DMN90H8D5HCT

DMN90H8D5HCT Datasheet (PDF)

..1. Size:602K diodes
dmn90h8d5hct.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BV R Package DSS DS(ON)T = +25C C High BV Rating for Power Application DSSTO220AB Low Input/Output Leakage 900V 7@V = 10V 2.5A GS(Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H

..2. Size:261K inchange semiconductor
dmn90h8d5hct.pdf

isc N-Channel MOSFET Transistor DMN90H8D5HCTFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

0.1. Size:545K diodes
dmn90h8d5hcti.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance IDBV R DSS DS(ON) High BVDSS Rating for Power Application T = +25C C Low Input/Output Leakage 900V 7@VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green

0.2. Size:252K inchange semiconductor
dmn90h8d5hcti.pdf

isc N-Channel MOSFET Transistor DMN90H8D5HCTIFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

8.1. Size:369K diodes
dmn90h2d2hcti.pdf

DMN90H2D2HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application (Note 7) TC = +25C Low Input/Output Leakage 1000V 2.2@VGS = 10V 6A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

8.2. Size:251K inchange semiconductor
dmn90h2d2hcti.pdf

isc N-Channel MOSFET Transistor DMN90H2D2HCTIFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: