DMN90H8D5HCT MOSFET Datasheet: N-Ch, 900V, 2.5A. Full specification with pinout and replacement list

DMN90H8D5HCT Specs and Replacement

Type Designator: DMN90H8D5HCT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: TO220AB

DMN90H8D5HCT substitution

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DMN90H8D5HCT datasheet

..1. Size:602K diodes
dmn90h8d5hct.pdf pdf_icon

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low Input Capacitance BV R Package DSS DS(ON) T = +25 C C High BV Rating for Power Application DSS TO220AB Low Input/Output Leakage 900V 7 @V = 10V 2.5A GS (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H... See More ⇒

..2. Size:261K inchange semiconductor
dmn90h8d5hct.pdf pdf_icon

isc N-Channel MOSFET Transistor DMN90H8D5HCT FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

0.1. Size:545K diodes
dmn90h8d5hcti.pdf pdf_icon

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BVDSS Rating for Power Application T = +25 C C Low Input/Output Leakage 900V 7 @VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green... See More ⇒

0.2. Size:252K inchange semiconductor
dmn90h8d5hcti.pdf pdf_icon

isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒