DMN95H8D5HCTI Todos los transistores

 ..1. Size:358K  diodes
 dmn95h8d5hcti.pdf

DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID MAX BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25 C ITO220AB Low Input/Output Leakage 950V 7 @VGS = 10V 2.5A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Des

 ..2. Size:251K  inchange semiconductor
 dmn95h8d5hcti.pdf

isc N-Channel MOSFET Transistor DMN95H8D5HCTI FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 950V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 2.1. Size:347K  1
 dmn95h8d5hct.pdf

DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) TC = +25 C High BVDSS Rating for Power Application 1000V 7 @VGS = 10V 2.5A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new genera

 2.2. Size:258K  inchange semiconductor
 dmn95h8d5hct.pdf

isc N-Channel Mosfet Transistor DMN95H8D5HCT FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 950V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V D

 8.1. Size:536K  diodes
 dmn95h2d2hcti.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN95H2D2HCTI Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BV Rating for Power Application DSS T = +25 C C Low Input/Output Leakage 950V 2.2 @V = 10V 6A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

 8.2. Size:251K  inchange semiconductor
 dmn95h2d2hcti.pdf

isc N-Channel MOSFET Transistor DMN95H2D2HCTI FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 950V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p