DMN95H8D5HCTI - параметры транзистора MOSFET, его аналоги, datasheet

DMN95H8D5HCTI Datasheet (PDF)

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DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID MAX BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C ITO220AB Low Input/Output Leakage 950V 7@VGS = 10V 2.5A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Des

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isc N-Channel MOSFET Transistor DMN95H8D5HCTIFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) TC = +25C High BVDSS Rating for Power Application 1000V 7@VGS = 10V 2.5A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new genera

2.2. Size:258K inchange semiconductor
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isc N-Channel Mosfet Transistor DMN95H8D5HCTFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV D