Справочник MOSFET. DMN95H8D5HCTI

 

DMN95H8D5HCTI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN95H8D5HCTI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 950 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для DMN95H8D5HCTI

 

 

DMN95H8D5HCTI Datasheet (PDF)

 ..1. Size:358K  diodes
 dmn95h8d5hcti.pdf

DMN95H8D5HCTI DMN95H8D5HCTI

DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID MAX BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C ITO220AB Low Input/Output Leakage 950V 7@VGS = 10V 2.5A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Des

 ..2. Size:251K  inchange semiconductor
 dmn95h8d5hcti.pdf

DMN95H8D5HCTI DMN95H8D5HCTI

isc N-Channel MOSFET Transistor DMN95H8D5HCTIFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 2.1. Size:347K  1
 dmn95h8d5hct.pdf

DMN95H8D5HCTI DMN95H8D5HCTI

DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) TC = +25C High BVDSS Rating for Power Application 1000V 7@VGS = 10V 2.5A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new genera

 2.2. Size:258K  inchange semiconductor
 dmn95h8d5hct.pdf

DMN95H8D5HCTI DMN95H8D5HCTI

isc N-Channel Mosfet Transistor DMN95H8D5HCTFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV D

 8.1. Size:536K  diodes
 dmn95h2d2hcti.pdf

DMN95H8D5HCTI DMN95H8D5HCTI

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN95H2D2HCTI GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BV R DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 950V 2.2@V = 10V 6A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

 8.2. Size:251K  inchange semiconductor
 dmn95h2d2hcti.pdf

DMN95H8D5HCTI DMN95H8D5HCTI

isc N-Channel MOSFET Transistor DMN95H2D2HCTIFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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