DMNH10H028SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMNH10H028SCT
Código: 10H028S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 31.9 nC
Tiempo de subida (tr): 6.6 nS
Conductancia de drenaje-sustrato (Cd): 166 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET DMNH10H028SCT
DMNH10H028SCT Datasheet (PDF)
dmnh10h028sct.pdf
GreenDMNH10H028SCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low
dmnh10h028sct.pdf
isc N-Channel MOSFET Transistor DMNH10H028SCTFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmnh10h028spsq-13.pdf
GreenDMNH10H028SPSQ 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed
dmnh10h028sk3.pdf
DMNH10H028SK3 Green100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri
dmnh10h028sk3.pdf
isc N-Channel MOSFET Transistor DMNH10H028SK3FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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