DMNH10H028SCT Todos los transistores

 ..1. Size:396K  diodes
 dmnh10h028sct.pdf

Green DMNH10H028SCT 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25 C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low

 ..2. Size:261K  inchange semiconductor
 dmnh10h028sct.pdf

isc N-Channel MOSFET Transistor DMNH10H028SCT FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 3.1. Size:549K  1
 dmnh10h028spsq-13.pdf

Green DMNH10H028SPSQ 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed

 3.2. Size:559K  diodes
 dmnh10h028sk3.pdf

DMNH10H028SK3 Green 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25 C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri

 3.3. Size:261K  inchange semiconductor
 dmnh10h028sk3.pdf

isc N-Channel MOSFET Transistor DMNH10H028SK3 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general