All MOSFET. DMNH10H028SCT Datasheet

 

DMNH10H028SCT MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMNH10H028SCT
   Marking Code: 10H028S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 31.9 nC
   trⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO220AB

 DMNH10H028SCT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMNH10H028SCT Datasheet (PDF)

 ..1. Size:396K  diodes
 dmnh10h028sct.pdf

DMNH10H028SCT DMNH10H028SCT

GreenDMNH10H028SCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low

 ..2. Size:261K  inchange semiconductor
 dmnh10h028sct.pdf

DMNH10H028SCT DMNH10H028SCT

isc N-Channel MOSFET Transistor DMNH10H028SCTFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 3.1. Size:549K  1
 dmnh10h028spsq-13.pdf

DMNH10H028SCT DMNH10H028SCT

GreenDMNH10H028SPSQ 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed

 3.2. Size:559K  diodes
 dmnh10h028sk3.pdf

DMNH10H028SCT DMNH10H028SCT

DMNH10H028SK3 Green100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri

 3.3. Size:261K  inchange semiconductor
 dmnh10h028sk3.pdf

DMNH10H028SCT DMNH10H028SCT

isc N-Channel MOSFET Transistor DMNH10H028SK3FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FCA20N60

 

 
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