DMNH4006SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMNH4006SK3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 140 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 9.3 nS
Conductancia de drenaje-sustrato (Cd): 556 pF
Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET DMNH4006SK3
DMNH4006SK3 Datasheet (PDF)
dmnh4006sk3.pdf
DMNH4006SK3 Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TC = +25C Low Input Capacitance 40V 6m @ VGS = 10V 140A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability De
dmnh4006sk3.pdf
isc N-Channel MOSFET Transistor DMNH4006SK3FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmnh4006spsq-13.pdf
DMNH4006SPSQ Green40V N-CHANNEL 175C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low
dmnh4006spsq.pdf
DMNH4006SPSQ Green40V N-CHANNEL 175C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low
dmnh4005sct.pdf
GreenDMNH4005SCT 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Low Input/Output Leakage TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 40V 4.0m @ VGS = 10V 150A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
dmnh4005sct.pdf
isc N-Channel MOSFET Transistor DMNH4005SCTFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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