DMNH6008SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMNH6008SCT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 437 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO220AB
- Selección de transistores por parámetros
DMNH6008SCT Datasheet (PDF)
dmnh6008sct.pdf

DMNH6008SCT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Rated to +175CIdeal for High Ambient Temperature BVDSS RDS(ON) MAX TC = +25C Environments 60V 8.0m @ VGS = 10V 130A 100% Unclamped Inductive SwitchingEnsures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Leakage
dmnh6008sct.pdf

isc N-Channel MOSFET Transistor DMNH6008SCTFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmnh6012lk3.pdf

Green DMNH6012LK3 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L
dmnh6011lk3.pdf

GreenDMNH6011LK3 55V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 12m @ VGS = 10V 80A 100% Unclamped Inductive Switching Ensures more Reliable 55V 18m @ VGS = 4.5V 65A and Robust End Application Low On-Resistance
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HM12N20D | FDP52N20 | P06P03LDG | WMP119N10LG2 | NCE65TF099F | HUFA76423S3ST
History: HM12N20D | FDP52N20 | P06P03LDG | WMP119N10LG2 | NCE65TF099F | HUFA76423S3ST



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