DMNH6008SCT
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMNH6008SCT
Marking Code: 6008SCT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 210
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 130
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 437
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO220AB
DMNH6008SCT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMNH6008SCT
Datasheet (PDF)
..1. Size:420K diodes
dmnh6008sct.pdf 
DMNH6008SCT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Rated to +175CIdeal for High Ambient Temperature BVDSS RDS(ON) MAX TC = +25C Environments 60V 8.0m @ VGS = 10V 130A 100% Unclamped Inductive SwitchingEnsures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Leakage
..2. Size:261K inchange semiconductor
dmnh6008sct.pdf
isc N-Channel MOSFET Transistor DMNH6008SCTFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
8.1. Size:610K diodes
dmnh6012lk3.pdf
Green DMNH6012LK3 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L
8.2. Size:590K diodes
dmnh6011lk3.pdf
GreenDMNH6011LK3 55V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 12m @ VGS = 10V 80A 100% Unclamped Inductive Switching Ensures more Reliable 55V 18m @ VGS = 4.5V 65A and Robust End Application Low On-Resistance
8.3. Size:349K diodes
dmnh6021sk3q.pdf
Green DMNH6021SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed
8.4. Size:579K diodes
dmnh6021sk3.pdf
GreenDMNH6021SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed Le
8.5. Size:397K diodes
dmnh6042sk3.pdf
DMNH6042SK3 Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary Rated to +175 Ideal for High Ambient Temperature C ID Max BVDSS RDS(ON) Max Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 25A and Robust End Application 60V 65m @ VGS = 4.5V 22A Low On-Resistance
8.6. Size:445K diodes
dmnh6042ssdq.pdf
DMNH6042SSDQ 60V DUAL N-CHANNEL 175C MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature ID Max V(BR)DSS RDS(ON) Max TC = +25C Environments 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 16.7A and Robust End Application 60V Low RDS(ON) Minimizes Power Losses 65m @ VGS
8.7. Size:265K inchange semiconductor
dmnh6012lk3.pdf
isc N-Channel MOSFET Transistor DMNH6012LK3FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
8.8. Size:265K inchange semiconductor
dmnh6011lk3.pdf
isc N-Channel MOSFET Transistor DMNH6011LK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
8.9. Size:266K inchange semiconductor
dmnh6021sk3.pdf
isc N-Channel MOSFET Transistor DMNH6021SK3FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
8.10. Size:266K inchange semiconductor
dmnh6042sk3.pdf
isc N-Channel MOSFET Transistor DMNH6042SK3FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Datasheet: WPB4002
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