All MOSFET. DMNH6008SCT Datasheet

 

DMNH6008SCT Datasheet and Replacement


   Type Designator: DMNH6008SCT
   Marking Code: 6008SCT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 437 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB
 

 DMNH6008SCT substitution

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DMNH6008SCT Datasheet (PDF)

 ..1. Size:420K  diodes
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DMNH6008SCT

DMNH6008SCT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Rated to +175CIdeal for High Ambient Temperature BVDSS RDS(ON) MAX TC = +25C Environments 60V 8.0m @ VGS = 10V 130A 100% Unclamped Inductive SwitchingEnsures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Leakage

 ..2. Size:261K  inchange semiconductor
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DMNH6008SCT

isc N-Channel MOSFET Transistor DMNH6008SCTFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 8.1. Size:610K  diodes
dmnh6012lk3.pdf pdf_icon

DMNH6008SCT

Green DMNH6012LK3 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L

 8.2. Size:590K  diodes
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DMNH6008SCT

GreenDMNH6011LK3 55V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 12m @ VGS = 10V 80A 100% Unclamped Inductive Switching Ensures more Reliable 55V 18m @ VGS = 4.5V 65A and Robust End Application Low On-Resistance

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK1681

Keywords - DMNH6008SCT MOSFET datasheet

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