DMNH6042SK3 Todos los transistores

 ..1. Size:397K  diodes
 dmnh6042sk3.pdf

DMNH6042SK3 Green 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary Rated to +175 Ideal for High Ambient Temperature C ID Max BVDSS RDS(ON) Max Environments TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 25A and Robust End Application 60V 65m @ VGS = 4.5V 22A Low On-Resistance

 ..2. Size:266K  inchange semiconductor
 dmnh6042sk3.pdf

isc N-Channel MOSFET Transistor DMNH6042SK3 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 50m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 5.1. Size:445K  diodes
 dmnh6042ssdq.pdf

DMNH6042SSDQ 60V DUAL N-CHANNEL 175 C MOSFET Product Summary Features and Benefits Rated to +175 C Ideal for High Ambient Temperature ID Max V(BR)DSS RDS(ON) Max TC = +25 C Environments 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 16.7A and Robust End Application 60V Low RDS(ON) Minimizes Power Losses 65m @ VGS

 8.1. Size:610K  diodes
 dmnh6012lk3.pdf

Green DMNH6012LK3 60V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25 C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L

 8.2. Size:590K  diodes
 dmnh6011lk3.pdf

Green DMNH6011LK3 55V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to +175 C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 C Environments 12m @ VGS = 10V 80A 100% Unclamped Inductive Switching Ensures more Reliable 55V 18m @ VGS = 4.5V 65A and Robust End Application Low On-Resistance

 8.3. Size:349K  diodes
 dmnh6021sk3q.pdf

Green DMNH6021SK3Q 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID max BVDSS RDS(ON) max Environments TC = +25 C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed

 8.4. Size:579K  diodes
 dmnh6021sk3.pdf

Green DMNH6021SK3 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed Le

 8.5. Size:420K  diodes
 dmnh6008sct.pdf

DMNH6008SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Rated to +175 C Ideal for High Ambient Temperature BVDSS RDS(ON) MAX TC = +25 C Environments 60V 8.0m @ VGS = 10V 130A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Leakage

 8.6. Size:265K  inchange semiconductor
 dmnh6012lk3.pdf

isc N-Channel MOSFET Transistor DMNH6012LK3 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.7. Size:265K  inchange semiconductor
 dmnh6011lk3.pdf

isc N-Channel MOSFET Transistor DMNH6011LK3 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.8. Size:266K  inchange semiconductor
 dmnh6021sk3.pdf

isc N-Channel MOSFET Transistor DMNH6021SK3 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.9. Size:261K  inchange semiconductor
 dmnh6008sct.pdf

isc N-Channel MOSFET Transistor DMNH6008SCT FEATURES Drain Current I = 130A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p