DMNH6042SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMNH6042SK3
Código: H6042S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 8.8 nC
Tiempo de subida (tr): 1.9 nS
Conductancia de drenaje-sustrato (Cd): 54 pF
Resistencia entre drenaje y fuente RDS(on): 0.05 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET DMNH6042SK3
DMNH6042SK3 Datasheet (PDF)
dmnh6042sk3.pdf
DMNH6042SK3 Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary Rated to +175 Ideal for High Ambient Temperature C ID Max BVDSS RDS(ON) Max Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 25A and Robust End Application 60V 65m @ VGS = 4.5V 22A Low On-Resistance
dmnh6042sk3.pdf
isc N-Channel MOSFET Transistor DMNH6042SK3FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmnh6042ssdq.pdf
DMNH6042SSDQ 60V DUAL N-CHANNEL 175C MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature ID Max V(BR)DSS RDS(ON) Max TC = +25C Environments 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 16.7A and Robust End Application 60V Low RDS(ON) Minimizes Power Losses 65m @ VGS
dmnh6012lk3.pdf
Green DMNH6012LK3 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L
dmnh6011lk3.pdf
GreenDMNH6011LK3 55V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 12m @ VGS = 10V 80A 100% Unclamped Inductive Switching Ensures more Reliable 55V 18m @ VGS = 4.5V 65A and Robust End Application Low On-Resistance
dmnh6021sk3q.pdf
Green DMNH6021SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed
dmnh6021sk3.pdf
GreenDMNH6021SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed Le
dmnh6008sct.pdf
DMNH6008SCT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Rated to +175CIdeal for High Ambient Temperature BVDSS RDS(ON) MAX TC = +25C Environments 60V 8.0m @ VGS = 10V 130A 100% Unclamped Inductive SwitchingEnsures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Leakage
dmnh6012lk3.pdf
isc N-Channel MOSFET Transistor DMNH6012LK3FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmnh6011lk3.pdf
isc N-Channel MOSFET Transistor DMNH6011LK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmnh6021sk3.pdf
isc N-Channel MOSFET Transistor DMNH6021SK3FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmnh6008sct.pdf
isc N-Channel MOSFET Transistor DMNH6008SCTFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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