All MOSFET. DMNH6042SK3 Datasheet

 

DMNH6042SK3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMNH6042SK3
   Marking Code: H6042S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.8 nC
   trⓘ - Rise Time: 1.9 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252

 DMNH6042SK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMNH6042SK3 Datasheet (PDF)

 ..1. Size:397K  diodes
dmnh6042sk3.pdf

DMNH6042SK3
DMNH6042SK3

DMNH6042SK3 Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary Rated to +175 Ideal for High Ambient Temperature C ID Max BVDSS RDS(ON) Max Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 25A and Robust End Application 60V 65m @ VGS = 4.5V 22A Low On-Resistance

 ..2. Size:266K  inchange semiconductor
dmnh6042sk3.pdf

DMNH6042SK3
DMNH6042SK3

isc N-Channel MOSFET Transistor DMNH6042SK3FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 50m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 5.1. Size:445K  diodes
dmnh6042ssdq.pdf

DMNH6042SK3
DMNH6042SK3

DMNH6042SSDQ 60V DUAL N-CHANNEL 175C MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature ID Max V(BR)DSS RDS(ON) Max TC = +25C Environments 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = 10V 16.7A and Robust End Application 60V Low RDS(ON) Minimizes Power Losses 65m @ VGS

 8.1. Size:610K  diodes
dmnh6012lk3.pdf

DMNH6042SK3
DMNH6042SK3

Green DMNH6012LK3 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L

 8.2. Size:590K  diodes
dmnh6011lk3.pdf

DMNH6042SK3
DMNH6042SK3

GreenDMNH6011LK3 55V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 12m @ VGS = 10V 80A 100% Unclamped Inductive Switching Ensures more Reliable 55V 18m @ VGS = 4.5V 65A and Robust End Application Low On-Resistance

 8.3. Size:349K  diodes
dmnh6021sk3q.pdf

DMNH6042SK3
DMNH6042SK3

Green DMNH6021SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed

 8.4. Size:579K  diodes
dmnh6021sk3.pdf

DMNH6042SK3
DMNH6042SK3

GreenDMNH6021SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C 100% Unclamped Inductive Switch (UIS) Test in Production 23m @ VGS = 10V 50A 60V Low On-Resistance 28m @ VGS = 4.5V 45A Fast Switching Speed Le

 8.5. Size:420K  diodes
dmnh6008sct.pdf

DMNH6042SK3
DMNH6042SK3

DMNH6008SCT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Rated to +175CIdeal for High Ambient Temperature BVDSS RDS(ON) MAX TC = +25C Environments 60V 8.0m @ VGS = 10V 130A 100% Unclamped Inductive SwitchingEnsures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Leakage

 8.6. Size:265K  inchange semiconductor
dmnh6012lk3.pdf

DMNH6042SK3
DMNH6042SK3

isc N-Channel MOSFET Transistor DMNH6012LK3FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.7. Size:265K  inchange semiconductor
dmnh6011lk3.pdf

DMNH6042SK3
DMNH6042SK3

isc N-Channel MOSFET Transistor DMNH6011LK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.8. Size:266K  inchange semiconductor
dmnh6021sk3.pdf

DMNH6042SK3
DMNH6042SK3

isc N-Channel MOSFET Transistor DMNH6021SK3FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.9. Size:261K  inchange semiconductor
dmnh6008sct.pdf

DMNH6042SK3
DMNH6042SK3

isc N-Channel MOSFET Transistor DMNH6008SCTFEATURESDrain Current I = 130A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 8.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2P986G

 

 
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