DMT6010SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMT6010SCT
Código: T6010S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 104 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 98 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 36.3 nC
Tiempo de subida (tr): 10.4 nS
Conductancia de drenaje-sustrato (Cd): 759 pF
Resistencia entre drenaje y fuente RDS(on): 0.0072 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET DMT6010SCT
DMT6010SCT Datasheet (PDF)
dmt6010sct.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMT6010SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 60V 7.2m @ VGS = 10V 98A Low Input Capacitance Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Description Halogen and Antimony Fre
dmt6010sct.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor DMT6010SCTFEATURESDrain Current I = 98A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmt6010lfg.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMT6010LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max V(BR)DSS RDS(ON) max TC = +25C Excellent Qgd x RDS (ON) Product (FOM) Advanced Technology for DC-DC Converters 7.5m @ VGS = 10V 30A Small form factor thermally efficient package enables higher 60V density end
dmt6016lps-13.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed
dmt6016lss.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 18m @ VGS = 10V 9.2 A Fast Switching Speed 60V 7.5 A 28m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3
dmt6016lfdf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMT6016LFDF60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C 0.6mm profile ideal for low profile applications 16m @ VGS = 10V 8.9A PCB footprint of 4mm2 60V 27m @ VGS = 4.5V 6.8A Low On-Resistance Totally Lead-Free & Ful
dmt6016lps.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NCEP072N10