Справочник MOSFET. DMT6010SCT

 

DMT6010SCT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMT6010SCT
   Маркировка: T6010S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 98 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 36.3 nC
   trⓘ - Время нарастания: 10.4 ns
   Cossⓘ - Выходная емкость: 759 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
   Тип корпуса: TO220

 Аналог (замена) для DMT6010SCT

 

 

DMT6010SCT Datasheet (PDF)

 ..1. Size:351K  diodes
 dmt6010sct.pdf

DMT6010SCT DMT6010SCT

DMT6010SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application 60V 7.2m @ VGS = 10V 98A Low Input Capacitance Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Description Halogen and Antimony Fre

 ..2. Size:261K  inchange semiconductor
 dmt6010sct.pdf

DMT6010SCT DMT6010SCT

isc N-Channel MOSFET Transistor DMT6010SCTFEATURESDrain Current I = 98A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.1. Size:384K  diodes
 dmt6010lfg.pdf

DMT6010SCT DMT6010SCT

DMT6010LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max V(BR)DSS RDS(ON) max TC = +25C Excellent Qgd x RDS (ON) Product (FOM) Advanced Technology for DC-DC Converters 7.5m @ VGS = 10V 30A Small form factor thermally efficient package enables higher 60V density end

 8.1. Size:639K  1
 dmt6016lps-13.pdf

DMT6010SCT DMT6010SCT

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

 8.2. Size:296K  diodes
 dmt6016lss.pdf

DMT6010SCT DMT6010SCT

DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 18m @ VGS = 10V 9.2 A Fast Switching Speed 60V 7.5 A 28m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 8.3. Size:337K  diodes
 dmt6016lfdf.pdf

DMT6010SCT DMT6010SCT

DMT6016LFDF60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C 0.6mm profile ideal for low profile applications 16m @ VGS = 10V 8.9A PCB footprint of 4mm2 60V 27m @ VGS = 4.5V 6.8A Low On-Resistance Totally Lead-Free & Ful

 8.4. Size:602K  diodes
 dmt6016lps.pdf

DMT6010SCT DMT6010SCT

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top