DMTH10H010SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMTH10H010SCT
Código: H10H010S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 187 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 56.4 nC
Tiempo de subida (tr): 22.5 nS
Conductancia de drenaje-sustrato (Cd): 746 pF
Resistencia entre drenaje y fuente RDS(on): 0.0095 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET DMTH10H010SCT
DMTH10H010SCT Datasheet (PDF)
dmth10h010sct.pdf
GreenDMTH10H010SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25C High BVDSS Rating for Power Application 100V 9.5m @VGS = 10V TO220AB 100A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note
dmth10h010sct.pdf
isc N-Channel MOSFET Transistor DMTH10H010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth10h010lct.pdf
DMTH10H010LCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Package Environments TC = +25C Low Input Capacitance 100V 9.5m @VGS = 10V TO220AB 108A High BVDSS Rating for Power Application Low Input/Output Leakage Description Lead-Free Finish;
dmth10h010lct.pdf
isc N-Channel MOSFET Transistor DMTH10H010LCTFEATURESDrain Current I = 108A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth10h005sct.pdf
GreenDMTH10H005SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) TC = +25C Environments 100V 5m @VGS = 10V 140A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description High BVDSS
dmth10h005lct.pdf
GreenDMTH10H005LCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 100V 5m @VGS = 10V 140A and Robust End Application Low Input Capacitance Description High BVD
dmth10h005sct.pdf
isc N-Channel MOSFET Transistor DMTH10H005SCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth10h005lct.pdf
isc N-Channel MOSFET Transistor DMTH10H005LCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
