DMTH10H010SCT MOSFET. Datasheet pdf. Equivalent
Type Designator: DMTH10H010SCT
Marking Code: H10H010S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 187 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 56.4 nC
trⓘ - Rise Time: 22.5 nS
Cossⓘ - Output Capacitance: 746 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO220AB
DMTH10H010SCT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMTH10H010SCT Datasheet (PDF)
dmth10h010sct.pdf
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GreenDMTH10H010SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25C High BVDSS Rating for Power Application 100V 9.5m @VGS = 10V TO220AB 100A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note
dmth10h010sct.pdf
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isc N-Channel MOSFET Transistor DMTH10H010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth10h010lct.pdf
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DMTH10H010LCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Package Environments TC = +25C Low Input Capacitance 100V 9.5m @VGS = 10V TO220AB 108A High BVDSS Rating for Power Application Low Input/Output Leakage Description Lead-Free Finish;
dmth10h010lct.pdf
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isc N-Channel MOSFET Transistor DMTH10H010LCTFEATURESDrain Current I = 108A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth10h005sct.pdf
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GreenDMTH10H005SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) TC = +25C Environments 100V 5m @VGS = 10V 140A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description High BVDSS
dmth10h005lct.pdf
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GreenDMTH10H005LCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 100V 5m @VGS = 10V 140A and Robust End Application Low Input Capacitance Description High BVD
dmth10h005sct.pdf
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isc N-Channel MOSFET Transistor DMTH10H005SCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
dmth10h005lct.pdf
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isc N-Channel MOSFET Transistor DMTH10H005LCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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