FCD260N65S3 Todos los transistores

 

FCD260N65S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCD260N65S3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO252
 

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FCD260N65S3 Datasheet (PDF)

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FCD260N65S3

FCD260N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 12 A, 260 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored

 ..2. Size:399K  onsemi
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FCD260N65S3

FCD260N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 12 A, 260 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored t

 ..3. Size:265K  inchange semiconductor
 fcd260n65s3.pdf pdf_icon

FCD260N65S3

isc N-Channel MOSFET Transistor FCD260N65S3FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 260m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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