ET6304 Todos los transistores

 

ET6304 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ET6304
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: PDFN3333
     - Selección de transistores por parámetros

 

ET6304 Datasheet (PDF)

 ..1. Size:960K  eternal
 et6304.pdf pdf_icon

ET6304

Eternal Semiconductor Inc.ET6304N-Channel High Density Trench MOSFET (30V, 64A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 4 @ VGS = 10V, ID=20A30V 645.7 @ VGS = 4.5V, ID=16AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeTOP Marking ET6304 XXXXXX

 9.1. Size:688K  eternal
 et6300.pdf pdf_icon

ET6304

Eternal Semiconductor Inc.ET6300N-Channel Enhancement-Mode MOSFET (30V,45A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max7.9 @ VGS = 10V, ID=20A30V 45A 12 @ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching LeadPb-free and halogen-freePin 1 / 2 / 3:

 9.2. Size:457K  eternal
 et6309.pdf pdf_icon

ET6304

Eternal Semiconductor Inc.ET6309N-Channel Fast Switching MOSFET (30V, 100A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Max4 @ VGS = 10V, ID=30A 30V 100A6 @ VGS = 4.5V, ID=15AFeatures Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trenchtechnology 100% EAS Guaranteedtechnology LeadPb-free and halogen-freeTOP Marking E

 9.3. Size:758K  eternal
 et6303.pdf pdf_icon

ET6304

Eternal Semiconductor Inc.ET6303P-Channel Enhancement-Mode MOSFET (-30V, -47A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.8.5 @ VGS = 10V, ID=20A-30V -47A15@ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching LeadPb-free and halogen-freePin 1 / 2

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLI3803PBF | NCE80H12

 

 
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