ET6309 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ET6309 datasheet

..1. Size:457K eternal
et6309.pdf pdf_icon

Eternal Semiconductor Inc. ET6309 N-Channel Fast Switching MOSFET (30V, 100A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Max 4 @ VGS = 10V, ID=30A 30V 100A 6 @ VGS = 4.5V, ID=15A Features Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trenchtechnology 100% EAS Guaranteedtechnology Lead Pb -free and halogen-free TOP Marking E

9.1. Size:688K eternal
et6300.pdf pdf_icon

Eternal Semiconductor Inc. ET6300 N-Channel Enhancement-Mode MOSFET (30V,45A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 7.9 @ VGS = 10V, ID=20A 30V 45A 12 @ VGS = 4.5V, ID=10A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching Lead Pb -free and halogen-free Pin 1 / 2 / 3

9.2. Size:758K eternal
et6303.pdf pdf_icon

Eternal Semiconductor Inc. ET6303 P-Channel Enhancement-Mode MOSFET (-30V, -47A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 8.5 @ VGS = 10V, ID=20A -30V -47A 15@ VGS = 4.5V, ID=10A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching Lead Pb -free and halogen-free Pin 1 / 2

9.3. Size:960K eternal
et6304.pdf pdf_icon

Eternal Semiconductor Inc. ET6304 N-Channel High Density Trench MOSFET (30V, 64A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 4 @ VGS = 10V, ID=20A 30V 64 5.7 @ VGS = 4.5V, ID=16A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free TOP Marking ET6304 XXXXXX

Otros transistores... ES9926 , ET2316 , ET2N7002K , ET4410 , ET4435 , ET6300 , ET6303 , ET6304 , STP80NF70 , ET6310 , ET6314 , ET8205 , ET8205A , ET8205B , ET8818 , EV2315 , EV3400 .