ET6309 MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

ET6309 Specs and Replacement

Type Designator: ET6309

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: PRPAK5X6-8L

ET6309 substitution

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ET6309 datasheet

..1. Size:457K eternal
et6309.pdf pdf_icon

Eternal Semiconductor Inc. ET6309 N-Channel Fast Switching MOSFET (30V, 100A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Max 4 @ VGS = 10V, ID=30A 30V 100A 6 @ VGS = 4.5V, ID=15A Features Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trenchtechnology 100% EAS Guaranteedtechnology Lead Pb -free and halogen-free TOP Marking E... See More ⇒

9.1. Size:688K eternal
et6300.pdf pdf_icon

Eternal Semiconductor Inc. ET6300 N-Channel Enhancement-Mode MOSFET (30V,45A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 7.9 @ VGS = 10V, ID=20A 30V 45A 12 @ VGS = 4.5V, ID=10A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching Lead Pb -free and halogen-free Pin 1 / 2 / 3 ... See More ⇒

9.2. Size:758K eternal
et6303.pdf pdf_icon

Eternal Semiconductor Inc. ET6303 P-Channel Enhancement-Mode MOSFET (-30V, -47A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 8.5 @ VGS = 10V, ID=20A -30V -47A 15@ VGS = 4.5V, ID=10A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching Lead Pb -free and halogen-free Pin 1 / 2 ... See More ⇒

9.3. Size:960K eternal
et6304.pdf pdf_icon

Eternal Semiconductor Inc. ET6304 N-Channel High Density Trench MOSFET (30V, 64A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 4 @ VGS = 10V, ID=20A 30V 64 5.7 @ VGS = 4.5V, ID=16A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free TOP Marking ET6304 XXXXXX ... See More ⇒

Detailed specifications: ES9926, ET2316, ET2N7002K, ET4410, ET4435, ET6300, ET6303, ET6304, STP80NF70, ET6310, ET6314, ET8205, ET8205A, ET8205B, ET8818, EV2315, EV3400