FIR10N60FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FIR10N60FG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO220F

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FIR10N60FG Datasheet (PDF)

..1. Size:2678K first semi
fir10n60fg.pdf

FIR10N60FGSilicon N-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 10 APD (TC=25) 125 WRDS(ON) 0.63 Features G D S Fast Switching ESD Improved Capability D Low Gate Charge (Typical Data:60nC) Low Reverse transfer capacitances(Typical:28pF) G 100% Single Pulse avalanche energy Test S ApplicationsMarking DiagramPower switch circuit of adap

7.1. Size:1909K first semi
fir10n65fg.pdf

FIR10N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=16pF(Typ.) G Low gate charge : Qg=35nC(Typ.) D S Low RDS(on) : RDS(on)=0.8D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR10N65FFIR10N65F = Specific Device CodeAbsolu

8.1. Size:4610K first semi
fir10n50fg.pdf

FIR10N50FGN - CHANNEL MOSFET-G PIN Connection TO-220FVDSS 500 V ID 10 A PD(TC=25) 40 W RDS(ON)Typ 0.5 General Description G D S , the silicon N-channel Enhanced FIR10N50FGVDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can be

8.2. Size:2398K first semi
fir10n70fg.pdf

FIR10N70FG700V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 37nC (Typ.). BVDSS=700V,ID=10A GDS RDS(on) : 1.0 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Locati

8.3. Size:4827K first semi
fir10n80fg.pdf

FIR10N80FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 800 VID 9 APD(TC=25) 190 WRDS(ON) 1.2 G D S FeaturesgSchematic dia ram D Fast Switching Low ON Resistance(Rdson1.20) G Low Gate Charge (Typical Data: 48nC) Low Reverse transfer capacitances(Typical: 17pF) S 100% Single Pulse avalanche energy Test Marking DiagramApplicationsY

8.4. Size:2148K first semi
fir10n20lg.pdf

FIR10N20LG200V N-Channel MOSFET-C TO-252 2 Features Low Intrinsic Capacitances Excellent Switching Characteristics1 Extended Safe Operating Area Unrivalled Gate Charge : 22 nC (Typ.)3 BVDSS=200V,ID=10A Lower RDS(on) : 0.4 (Max) @VG=10V 100% Avalanche Tested1.Gate (G)2.Drain (D)3.Source (S)Absolute Maximum Ratings (Ta=25 unless otherw

8.5. Size:1918K first semi
fir10n10lg.pdf

FIR10N10LG100V N-Channel MOSFET-SETO-252Features: 2 Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 14nC (Typ.).1 BVDSS=100V,ID=10A3 RDS(on) : 0.21 (Max) @VG=10V 100% Avalanche Tested 1. Gate (G)2. Drain (D)3. Source (S)Absolute Maximum Ratings (TA=25un

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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