Справочник MOSFET. FIR10N60FG

 

FIR10N60FG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FIR10N60FG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 60 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FIR10N60FG

 

 

FIR10N60FG Datasheet (PDF)

 ..1. Size:2678K  first semi
 fir10n60fg.pdf

FIR10N60FG FIR10N60FG

FIR10N60FGSilicon N-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 10 APD (TC=25) 125 WRDS(ON) 0.63 Features G D S Fast Switching ESD Improved Capability D Low Gate Charge (Typical Data:60nC) Low Reverse transfer capacitances(Typical:28pF) G 100% Single Pulse avalanche energy Test S ApplicationsMarking DiagramPower switch circuit of adap

 7.1. Size:1909K  first semi
 fir10n65fg.pdf

FIR10N60FG FIR10N60FG

FIR10N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=16pF(Typ.) G Low gate charge : Qg=35nC(Typ.) D S Low RDS(on) : RDS(on)=0.8D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR10N65FFIR10N65F = Specific Device CodeAbsolu

 8.1. Size:4610K  first semi
 fir10n50fg.pdf

FIR10N60FG FIR10N60FG

FIR10N50FGN - CHANNEL MOSFET-G PIN Connection TO-220FVDSS 500 V ID 10 A PD(TC=25) 40 W RDS(ON)Typ 0.5 General Description G D S , the silicon N-channel Enhanced FIR10N50FGVDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can be

 8.2. Size:2398K  first semi
 fir10n70fg.pdf

FIR10N60FG FIR10N60FG

FIR10N70FG700V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 37nC (Typ.). BVDSS=700V,ID=10A GDS RDS(on) : 1.0 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Locati

 8.3. Size:4827K  first semi
 fir10n80fg.pdf

FIR10N60FG FIR10N60FG

FIR10N80FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 800 VID 9 APD(TC=25) 190 WRDS(ON) 1.2 G D S FeaturesgSchematic dia ram D Fast Switching Low ON Resistance(Rdson1.20) G Low Gate Charge (Typical Data: 48nC) Low Reverse transfer capacitances(Typical: 17pF) S 100% Single Pulse avalanche energy Test Marking DiagramApplicationsY

 8.4. Size:2148K  first semi
 fir10n20lg.pdf

FIR10N60FG FIR10N60FG

FIR10N20LG200V N-Channel MOSFET-C TO-252 2 Features Low Intrinsic Capacitances Excellent Switching Characteristics1 Extended Safe Operating Area Unrivalled Gate Charge : 22 nC (Typ.)3 BVDSS=200V,ID=10A Lower RDS(on) : 0.4 (Max) @VG=10V 100% Avalanche Tested1.Gate (G)2.Drain (D)3.Source (S)Absolute Maximum Ratings (Ta=25 unless otherw

 8.5. Size:1918K  first semi
 fir10n10lg.pdf

FIR10N60FG FIR10N60FG

FIR10N10LG100V N-Channel MOSFET-SETO-252Features: 2 Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 14nC (Typ.).1 BVDSS=100V,ID=10A3 RDS(on) : 0.21 (Max) @VG=10V 100% Avalanche Tested 1. Gate (G)2. Drain (D)3. Source (S)Absolute Maximum Ratings (TA=25un

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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