FIR2N60ALG Todos los transistores

 

FIR2N60ALG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FIR2N60ALG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 7.2 nC
   trⓘ - Tiempo de subida: 23.4 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
   Paquete / Cubierta: TO252

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FIR2N60ALG Datasheet (PDF)

 ..1. Size:1681K  first semi
fir2n60alg.pdf

FIR2N60ALG
FIR2N60ALG

FIR2N60ALGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR2N60ALG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan Dproprietary F-CellTM structure VDMOS technology. The improved Gplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

 6.1. Size:3992K  first semi
fir2n60afg.pdf

FIR2N60ALG
FIR2N60ALG

FIR2N60AFGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 2 APD (TC=25) 35 WRDS(ON) 4.5 G Features D S Fast Switching gSchematic dia ram Low ON Resistance D Low Gate Charge Low Reverse transfer capacitances G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPower switch circuit of adaptor and charger. Y = Year

 8.1. Size:2194K  first semi
fir2n65afg.pdf

FIR2N60ALG
FIR2N60ALG

FIR2N65AFGAdvanced N-Ch Power MOSFET-XPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.5nC (Typ.). BVDSS=650V,ID=2AG RDS(on) : 4.2 (Typ) @VG=10VDS 100% Avalanche TestedgSchematic dia ramDGSY = YearA = Assembly LocationWW = Wor

 8.2. Size:2967K  first semi
fir2n65abpg.pdf

FIR2N60ALG
FIR2N60ALG

FIR2N65ABPGFIR2N65ABPG650V N-Channel MOSFET -I PIN Connection TO-251(I-PAK)Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.7nC (Typ.).G D S BVDSS=650V,ID=2A RDS(on) : 5.0 (Max) @VG=10VgSchematic dia ram 100% Avalanche TestedD G S Marking DiagramY

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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