BL2302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BL2302 Datasheet (PDF)

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Product specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Electrostatic Sensitive Devices. MSL 1. APPLICATIONS Powe

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Product specification P-Channel Enhancement Mode Power Mosfet BL2305 FEATURES Super High Dense Cell Design for Extremely PbLow R Lead-free DS(ON) Reliable and Rugged Electrostatic Sensitive Devices. MSL1 APPLICATIONS Power Management in Notebook. Portable Equipment. SOT-23 Battery Powered System. ORDERING INFORMATION Type No. Marking P

9.2. Size:744K cn vbsemi
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VBL2309www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = - 10 V - 75 100 % Rg TestedRoHS- 30 56 nCCOMPLIANT 100 % UIS Tested0.011 at VGS = - 4.5 V - 65APPLICATIONS Load Switch Notebook Adaptor SwitchS D2PAK (TO-263)G DGSD P

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