BL2302 MOSFET Datasheet: N-Ch, 20V, 2.8A. Full specification with pinout and replacement list

BL2302 Specs and Replacement

Type Designator: BL2302

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23

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BL2302 datasheet

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bl2302.pdf pdf_icon

Product specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Electrostatic Sensitive Devices. MSL 1. APPLICATIONS Powe... See More ⇒

9.1. Size:453K galaxy
bl2305.pdf pdf_icon

Product specification P-Channel Enhancement Mode Power Mosfet BL2305 FEATURES Super High Dense Cell Design for Extremely Pb Low R Lead-free DS(ON) Reliable and Rugged Electrostatic Sensitive Devices. MSL1 APPLICATIONS Power Management in Notebook. Portable Equipment. SOT-23 Battery Powered System. ORDERING INFORMATION Type No. Marking P... See More ⇒

9.2. Size:744K cn vbsemi
vbl2309.pdf pdf_icon

VBL2309 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = - 10 V - 75 100 % Rg Tested RoHS - 30 56 nC COMPLIANT 100 % UIS Tested 0.011 at VGS = - 4.5 V - 65 APPLICATIONS Load Switch Notebook Adaptor Switch S D2PAK (TO-263) G D G S D P... See More ⇒

Detailed specifications: FIR4N65FG, FIR4N65LG, FIR7N60FG, FIR7N65FG, AS3423B, 2N7002HW, 2N7002HT, 2N7002HL, IRFB7545, BL2305, GP2301, GP2302, GP3139, GP3401, HOA2303, HOA2307, SPN3006

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