HA20N50 Todos los transistores

 ..1. Size:4791K  haolin elec
 ha20n50.pdf

HA20N50 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 500 V Continuous Drai

 0.1. Size:164K  vishay
 siha20n50e.pdf

SiHA20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.184 Reduced switching and conduction losses Qg max. (nC) 92 Low gate charge (Qg) Qgs (nC) 10 Avalanche energy rated (UIS) Qgd (nC) 19 Mater

 0.2. Size:402K  feihonltd
 fha20n50a.pdf

 9.1. Size:740K  feihonltd
 fhf20n65a fhp20n65a fha20n65a.pdf

 9.2. Size:939K  feihonltd
 fha20n90a.pdf

N N-CHANNEL MOSFET FHA20N90A MAIN CHARACTERISTICS FEATURES ID 20A Low gate charge VDSS 900 V Crss ( 18.3pF) Low Crss (typical 18.3pF ) Rdson-typ @Vgs=10V 0.28 Fast switching Qg-typ 140.5nC 100% 100% avalanche tested dv/dt Impro

 9.3. Size:858K  feihonltd
 fhf20n60a fhp20n60a fha20n60a.pdf

 9.4. Size:3552K  haolin elec
 ha20n60.pdf

HA20N60 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested BVDSS = 600 V Improved dv/dt capability RDS(on) typ = 0.34 1 APPLICATIONS 2 ID = 20 A 3 Switch Mode Power Supply (SMPS) 1.Gate 2. Drain 3. Source Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking