HB100N08 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HB100N08 datasheet

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hb100n08 hp100n08.pdf pdf_icon

HB100N08 HP100N08 N-Channel Trench Power MOSFET General Description -channel 100N08 is N MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=100A@ VGS=10V; RDS(ON)

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phb100n03lt-01.pdf pdf_icon

PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHB100N03LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated

7.2. Size:1507K cn wxdh
dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur

Otros transistores... 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , HA9N90 , AON7408 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 , HU30N03 .