HB100N08 Datasheet and Replacement. Cross Reference Search

HB100N08 Datasheet (PDF)

..1. Size:4136K haolin elec
hb100n08 hp100n08.pdf pdf_icon

HB100N08 \HP100N08N-Channel Trench Power MOSFET General Description -channel 100N08 is N MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=100A@VGS=10V; RDS(ON)

7.1. Size:331K philips
phb100n03lt-01.pdf pdf_icon

PHB100N03LTN-channel enhancement mode field-effect transistorRev. 01 07 September 2000 Product specificationM3D1661. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHB100N03LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated

7.2. Size:1507K cn wxdh
dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

DH100N03B13/DHF100N03B13/DHI100N03B13/DHE100N03B13/DHB100N03B13/DHD100N03B13100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.3mDS(on) (TYP)standard.13 SI = 100AD2 Featur

Datasheet: 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , HA9N90 , 2N7000 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 , HU30N03 .