HFS13N50 Todos los transistores

 

HFS13N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS13N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 205 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de HFS13N50 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HFS13N50 Datasheet (PDF)

 ..1. Size:930K  haolin elec
 hfs13n50.pdf pdf_icon

HFS13N50

Sep 2009BVDSS = 500 VRDS(on) typ = 0.4 HFS13N50ID = 13 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Unrivalled Gate Charge : 38 nC (Typ ) Ext

 0.1. Size:151K  semihow
 hfs13n50u.pdf pdf_icon

HFS13N50

Nov 2013BVDSS = 500 VRDS(on) typ = 0.39 HFS13N50U ID = 13 A500V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Lo

 0.2. Size:154K  semihow
 hfs13n50s.pdf pdf_icon

HFS13N50

March 2014BVDSS = 500 VRDS(on) typ HFS13N50SID = 13 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area

 8.1. Size:185K  semihow
 hfs13n60u.pdf pdf_icon

HFS13N50

Sep 2012BVDSS = 600 VRDS(on) typ = 0.33 HFS13N60U ID = 14.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HP20N50 , HF20N60 , HP20N60 , HF25N50 , HP25N50 , HF5N65 , HF640 , HP640 , CS150N03A8 , HP120N04 , HP16N10 , HF16N10 , HP60N75 , HP80N80 , HY029N10P , HY029N10B , HY030N06C2 .

History: IPD380P06NM | IXFN140N20P | SHD226314 | TK15A60D | BLP03N08-F | IRF5NJ3315 | IXFH100N25P

 

 
Back to Top

 


 
.