HY1106S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HY1106S Datasheet (PDF)

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HY1106SN-Channel Enhancement Mode MOSFETFeatures Pin Description 60 / 11AVDD13RDS(ON)= m (typ.) @ VGS=10VDDRDS(ON)=13.5m (typ.) @ VGS=4.5VAvalanche RatedSSS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of SOP-8(RoHS Compliant)pplicationsAD Power Management in DC/DC ConverterG N-Channel MOSFETSOrdering and Marki

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SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY110N06T 55V / 110A55V, RDS(ON)=5.5mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product (

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HY1103SN-Channel Enhancement Mode MOSFET Feature Pin Description 30V/11ARDS(ON)=9.5m(typ.)@VGS = 10V RDS(ON)=11.5m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) SOP8LApplications Switching Application Power Management for DC/DC Battery ProtectionN-Channel MOSFET Ordering and Marking

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