HY1106S Datasheet. Specs and Replacement

Type Designator: HY1106S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 188 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOP8

HY1106S substitution

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HY1106S datasheet

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HY1106S

HY1106S N-Channel Enhancement Mode MOSFET Features Pin Description 60 / 11A V D D 13 RDS(ON)= m (typ.) @ VGS=10V D D RDS(ON)=13.5m (typ.) @ VGS=4.5V Avalanche Rated S S S Reliable and Rugged G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) pplications A D Power Management in DC/DC Converter G N-Channel MOSFET S Ordering and Marki... See More ⇒

 9.1. Size:223K  hy
 hy110n06t.pdf pdf_icon

HY1106S

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY110N06T 55V / 110A 55V, RDS(ON)=5.5mW@VGS=10V, ID=30A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product (... See More ⇒

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HY1106S

HY1103S N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/11A RDS(ON)=9.5m (typ.)@VGS = 10V RDS(ON)=11.5m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available (RoHS Compliant) SOP8L Applications Switching Application Power Management for DC/DC Battery Protection N-Channel MOSFET Ordering and Marking ... See More ⇒

Detailed specifications: HY0810S, HY0910D, HY0910U, HY0910V, HY0C20C, HY10P10D, HY10P10U, HY1103S, RU7088R, HY1203S, HY1210D, HY1210U, HY1210V, HY12P03C2, HY12P03S, HY1303C, HY1310D

Keywords - HY1106S MOSFET specs

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