2SK1850 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1850
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 10 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 27 nC
trⓘ - Tiempo de subida: 90 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: MP10
Búsqueda de reemplazo de MOSFET 2SK1850
2SK1850 Datasheet (PDF)
2sk1859.pdf
2SK1859 Silicon N Channel MOS FET REJ03G0981-0200 (Previous: ADE-208-1328) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. GateG2. Dr
rej03g0981 2sk1859ds.pdf
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2sk1855.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1855 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V
Otros transistores... 2SK1760 , 2SK1784 , 2SK1785 , 2SK1793 , 2SK1794 , 2SK1795 , 2SK1796 , 2SK1824 , IRFZ44 , 2SK1851 , 2SK1852 , 2SK1853 , 2SK1917-MR , 2SK193 , 2SK195 , 2SK1953 , 2SK1954 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918