All MOSFET. 2SK1850 Datasheet

 

2SK1850 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1850
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: MP10

 2SK1850 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1850 Datasheet (PDF)

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2sk1850.pdf

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 8.4. Size:82K  renesas
2sk1859.pdf

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2SK1859 Silicon N Channel MOS FET REJ03G0981-0200 (Previous: ADE-208-1328) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. GateG2. Dr

 8.5. Size:95K  renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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 8.7. Size:54K  inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1855 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V

Datasheet: 2SK1760 , 2SK1784 , 2SK1785 , 2SK1793 , 2SK1794 , 2SK1795 , 2SK1796 , 2SK1824 , IRF1404 , 2SK1851 , 2SK1852 , 2SK1853 , 2SK1917-MR , 2SK193 , 2SK195 , 2SK1953 , 2SK1954 .

 

 
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