SSS10N60A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSS10N60A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 74 nC
Tiempo de subida (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 190 pF
Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET SSS10N60A
SSS10N60A Datasheet (PDF)
sss10n60a.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.1 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
sss10n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., LtdSSS10N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 10.0 AID600 V VDSS Rdson 0.75 @Vgs=10V34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS
sss10n60.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTDN-CHANNEL MOSFETSSS10N60 Package MAIN CHARACTERISTICS 10.0 AID600 V VDSS 0.75 Rdson@Vgs=10V34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
sss1004.pdf
SSS1004 Main Product Characteristics VDSS 100V RDS(on) 3.7m (typ.) ID 180A Marking a nd p in TO-220 Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
sss1004a7.pdf
SSS1004A7 Main Product Characteristics VDSS 100V 1, Gate RDS(on) 3.0m (typ.) 2~3,5~7 Source 4,8 Drain ID 180A Schematic diagram TO-263-7L Pin Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re
Otros transistores... SSP7N80A , SSP80N06A , SSR1N50 , SSR1N50A , SSR1N60A , SSR2N60A , SSR3055A , SSR3055LA , IRF540N , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 .
