SSS10N60A Todos los transistores

 ..1. Size:504K  samsung
 sss10n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.1 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 25 (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 6.1. Size:14125K  shenzhen
 sss10n60.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS10N60 N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 10.0 A ID 600 V VDSS Rdson 0.75 @Vgs=10V 34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 6.2. Size:4141K  cn tuofeng
 sss10n60.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD N-CHANNEL MOSFET SSS10N60 Package MAIN CHARACTERISTICS 10.0 A ID 600 V VDSS 0.75 Rdson @Vgs=10V 34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 9.1. Size:482K  silikron
 sss1004.pdf

SSS1004 Main Product Characteristics VDSS 100V RDS(on) 3.7m (typ.) ID 180A Marking a nd p in TO-220 Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

 9.2. Size:362K  silikron
 sss1004a7.pdf

SSS1004A7 Main Product Characteristics VDSS 100V 1, Gate RDS(on) 3.0m (typ.) 2 3,5 7 Source 4,8 Drain ID 180A Schematic diagram TO-263-7L Pin Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re