SSS10N60A - описание и поиск аналогов

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.1 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 25 (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS10N60 N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 10.0 A ID 600 V VDSS Rdson 0.75 @Vgs=10V 34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD N-CHANNEL MOSFET SSS10N60 Package MAIN CHARACTERISTICS 10.0 A ID 600 V VDSS 0.75 Rdson @Vgs=10V 34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

SSS1004 Main Product Characteristics VDSS 100V RDS(on) 3.7m (typ.) ID 180A Marking a nd p in TO-220 Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

SSS1004A7 Main Product Characteristics VDSS 100V 1, Gate RDS(on) 3.0m (typ.) 2 3,5 7 Source 4,8 Drain ID 180A Schematic diagram TO-263-7L Pin Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re