HY1506C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HY1506C2Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/48AD D D D D D D DRDS(ON)= 10.5m(typ.)@VGS = 10V RDS(ON)= 12.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S SPin1 PPAK5*6-8LApplications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application

HY1506C2Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/48AD D D D D D D DRDS(ON)= 10.5m(typ.)@VGS = 10V RDS(ON)= 12.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S SPin1 PPAK5*6-8LApplications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application

HY1506P/I/BAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25C 55 A Mounted on Large Heat Sink IDM TC=25C 220** A Pulsed Drain C

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON-T1 FORWARD CURRENT AMBIENT TEMPERATURE () 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY150N075T 75V / 150A75V, RDS(ON)=4.5mW@VGS=10V, ID=30AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product

HY1503C1 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D 30V/34A RDS(ON)= 7.1m(typ.)@VGS = 10V RDS(ON)= 10.0 m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged G S S S Halogen Free and Green Devices Available Pin1 (RoHS Compliant) DFN3*3-8L Applications Switching Application Power Management for DC/D