HY1506C2 Datasheet. Specs and Replacement

Type Designator: HY1506C2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 187 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PPAK5X6-8L

HY1506C2 substitution

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HY1506C2 datasheet

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HY1506C2

HY1506C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/48A D D D D D D D D RDS(ON)= 10.5m (typ.)@VGS = 10V RDS(ON)= 12.2m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application ... See More ⇒

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HY1506C2

HY1506C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/48A D D D D D D D D RDS(ON)= 10.5m (typ.)@VGS = 10V RDS(ON)= 12.2m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application ... See More ⇒

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HY1506C2

HY1506P/I/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 55 A Mounted on Large Heat Sink IDM TC=25 C 220** A Pulsed Drain C... See More ⇒

 9.1. Size:225K  hy
 hy150n075t.pdf pdf_icon

HY1506C2

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY150N075T 75V / 150A 75V, RDS(ON)=4.5mW@VGS=10V, ID=30A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product ... See More ⇒

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Detailed specifications: HY1303C, HY1310D, HY1310U, HY1310V, HY1403D, HY1403U, HY1403V, HY1503C1, 50N06, HY15P03C2, HY15P03S, HY1603D, HY1603U, HY1603S, HY1603P, HY1603B, HY1606D

Keywords - HY1506C2 MOSFET specs

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