HY1607U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY1607U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 68 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 70 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 351 pF
Resistencia entre drenaje y fuente RDS(on): 0.0085 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET HY1607U
HY1607U Datasheet (PDF)
hy1607d hy1607u hy1607v.pdf
HY1607D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 68V/70ARDS(ON)= 6.8m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SDG Lead Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Cod
hy1607p hy1607m hy1607b hy1607mf hy1607ps hy1607pm.pdf
SD GSDG SSDDGG TO-220FB-3L TO-220FB-3M TO-263-2L TO-3PM-3L SDG SSD
hy1607p.pdf
HY1607PN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/70ARDS(ON)= 6.5m (typ.) @ VGS=10V100% avalanche testedGD Reliable and Rugged S Lead Free and Green Devices Available D(RoHS Compliant)ApplicationsGSwitching application Power Management for Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeP : T
hy1606p hy1606b.pdf
HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and
hy1606p-b.pdf
HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and
hy1603d hy1603u hy1603s.pdf
HY1603D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.0m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge SSD Excellent CdV/dt effect decline DGG Advanced high cell density Trench technology SDG Halogen - Free Device Available TO-251-3L TO-251-3LTO-252-2LApplicationsD High Frequency Synchronous Buck
hy1606d hy1606u hy1606v.pdf
HY1606D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66A,RDS(ON)=10.4 m(typ.) @ VGS=10V Avalanche Rated Reliable and RuggedSDSS Lead Free and Green Devices AvailableGDDGG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marki
hy1603p hy1603b.pdf
HY1603P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.8m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline SD Advanced high cell density Trench technology G Halogen - Free Device Available SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD High Frequency Synchronous
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
