SSS2N60A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSS2N60A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 23 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 1.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 38 pF
Resistencia entre drenaje y fuente RDS(on): 5 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET SSS2N60A
SSS2N60A Datasheet (PDF)
sss2n60a.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
ssp2n60b sss2n60b.pdf
SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit
sss2n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and have a highrug
sss2n60.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTDN-CHANNEL MOSFET SSS2N602 Amps 600Volts2 Amps 600Volts2 Amps 600Volts2 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS2N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance and
Otros transistores... SSR1N50A , SSR1N60A , SSR2N60A , SSR3055A , SSR3055LA , SSS10N60A , SSS1N50A , SSS1N60A , 10N60 , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , SSS4N80A .
