SSS2N60A - аналоги, параметры транзистора - Справочник транзисторов

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..1. Size:507K samsung
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Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 3.892 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

7.1. Size:862K fairchild semi
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SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to Fast swit

7.2. Size:1620K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS2N60 2 Amps 600Volts 2 Amps 600Volts 2 Amps 600Volts 2 Amps 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rug

7.3. Size:8834K cn tuofeng
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTD N-CHANNEL MOSFET SSS2N60 2 Amps 600Volts 2 Amps 600Volts 2 Amps 600Volts 2 Amps 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and

Другие MOSFET... SSR1N50A , SSR1N60A , SSR2N60A , SSR3055A , SSR3055LA , SSS10N60A , SSS1N50A , SSS1N60A , IRFB4110 , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , SSS4N80A .