HY1804D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY1804D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 461 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO252

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HY1804D datasheet

 ..1. Size:1499K  hymexa
 hy1804d hy1804v.pdf pdf_icon

HY1804D

HY1804D/U N-Channel Enhancement Mode MOSFET Features Pin Description 40V/80A, RDS(ON)=4.0 m (typ.) @ VGS=10V RDS(ON)=4.6 m (typ.) @ VGS=4.5 V S S D S D S Avalanche Rated G D G D G G Reliable and Rugged S S D D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Pow

 8.1. Size:911K  hymexa
 hy1804p hy1804b.pdf pdf_icon

HY1804D

HY1804P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/110A RDS(ON)= 3.6m (typ.)@VGS = 10V RDS(ON)= 4.4m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S GD Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MO

 9.1. Size:6123K  1
 hy1808ap hy1808m hy1808b hy1808ps hy1808pm.pdf pdf_icon

HY1804D

HY1808AP/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description eatures F 80V/84A RDS(ON)=6.2m (typ.) @ VGS=10V S Avalanche Rated D S D G G Reliable and Rugged S D G Lead Free and Green Devices Available TO-263-2L TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D G Applications TO-3PS-3L TO-3PS-3M D Power Management for Inverter Systems. G N-Channe

 9.2. Size:1648K  1
 hy1803c2.pdf pdf_icon

HY1804D

HY1803C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/80A D D D D D D D D RDS(ON)= 2.4m (typ.) @VGS = 10V RDS(ON)= 2.8m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DC N-Channel MOSFET

MOSTRAR MÁS

Otros transistores... HY1710M, HY1710B, HY1710MF, HY1710PS, HY1710PM, HY1720P, HY1720B, HY1803C2, IRLB4132, HY1804V, HY1804P, HY1804B, HY1904C2, HY1904D, HY1904U, HY1904V, HY1908D