HY1908P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY1908P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 185 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 90 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 86 nC
Tiempo de subida (tr): 42 nS
Conductancia de drenaje-sustrato (Cd): 389 pF
Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
Paquete / Cubierta: TO220
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HY1908P Datasheet (PDF)
hy1908p hy1908m hy1908b hy1908mf hy1908ps hy1908pm.pdf
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HY1908P/M/B/ MF /PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/90A RDS(ON)= 7m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power management for inverter systems TO-220MF-3L TO-3PS-3L TO-3PM-
hy1908d hy1908u hy1908s.pdf
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HY1908D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/90A,7.8 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and RuggedSSDDG Lead Free and Green Devices AvailableG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Informatio
hy1904c2.pdf
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HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe
hy1906c2.pdf
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HY1906C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/70AD D D D D D D DRDS(ON)= 5.7 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe
hy1904d hy1904u hy1904v.pdf
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HY1904D/U/V N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/72A RDS(ON)= 4.8m(typ.)@VGS = 10V RDS(ON)= 5.8m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MOSFET
hy1906p hy1906b.pdf
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HY1906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description/ , 60V 120 A6.0 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking
hy1904c2.pdf
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HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .